型号:

IRLH5036TR2PBF

RoHS:无铅 / 符合
制造商:International Rectifier描述:MOSFET N-CH 60V 100A 5X6 PQFN
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IRLH5036TR2PBF PDF
产品目录绘图 IR Hexfet PQFN
特色产品 Mid-Voltage Power MOSFETs
标准包装 400
系列 HEXFET®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 60V
电流 - 连续漏极(Id) @ 25° C 20A
开态Rds(最大)@ Id, Vgs @ 25° C 4.4 毫欧 @ 50A,10V
Id 时的 Vgs(th)(最大) 2.5V @ 150µA
闸电荷(Qg) @ Vgs 90nC @ 10V
输入电容 (Ciss) @ Vds 5360pF @ 25V
功率 - 最大 3.6W
安装类型 表面贴装
封装/外壳 8-PowerVQFN
供应商设备封装 PQFN(5x6)
包装 带卷 (TR)
其它名称 IRLH5036TR2PBFTR
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